Structurally Doped Graphenoid Materials: Characterization and Fabrication
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Lockheed Martin Corporation, Palo Alto, CA (United States)
The purpose of this work was to establish the feasibility of patterning graphene to induce an electronic band gap, to characterize the material to verify the electronic properties, and to fabricate devices. The main objectives of this work are: (1) pattern graphene material to induce an electronic band gap, (2) characterize the patterned graphene material to verify it’s properties, and (3) fabricate electronic devices from the patterned graphene material. We developed an approach based on nanoimprint lithography to pattern nanometer scale features in single-layer graphene, and demonstrated the approach through structural and optical characterization of the patterned material. Roadblocks in performing nanoimprint lithography on graphene were identified and surmounted with new process developments. An approach for fabricating complete electronic devices was also implemented. These accomplishments establish nanoimprint lithography as an important wafer-scale approach for patterning of graphene. These results are important for DOE and LM applications in electronics and optoelectronics that could harness the properties of graphene.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Lockheed Martin Corporation, Palo Alto, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1098046
- Report Number(s):
- SAND--2013-8767P; SC99/01573.104
- Country of Publication:
- United States
- Language:
- English
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