Reliability of IGBT in a STATCOM for Harmonic Compensation and Power Factor Correction

Conference · Sun Jan 01 00:00:00 EST 2012

OSTI ID:1093754

Gopi Reddy, Lakshmi Reddy ^[1]; Tolbert, Leon M ^[1]; Ozpineci, Burak ^[1]; Xu, Yan ^[1]; Rizy, D Tom ^[1]

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1. ORNL

With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Facility
• Sponsoring Organization: USDOE
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1093754
• Resource Relation: Conference: 2012 27th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Orlando, FL, USA, 20120205, 20120209
• Country of Publication: United States
• Language: English