Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

Journal Article · Sun Jan 01 04:00:00 EST 2012 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2011.09.019· OSTI ID:1093030

GIARE, C ^[1]; RAO, S ^[1]; RILEY, M ^[1]; CHEN, L ^[1]; Goyal, Amit ^[2]; BHAT, I ^[1]; LU, T ^[1]; WANG, G ^[1]

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1. Rensselaer Polytechnic Institute (RPI)
2. ORNL

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: OE USDOE - Office of Electric Transmission and Distribution
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1093030
• Journal Information: Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 6 Vol. 520; ISSN 0040-6090
• Country of Publication: United States
• Language: English