Low temperature epitaxial growth of Ge on cube- textured Ni

Journal Article · Sat Dec 31 23:00:00 EST 2011 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2012.01.035· OSTI ID:1089757

GIARE, C ^[1]; Palazzo, J ^[1]; Goyal, Amit ^[2]; WANG, G ^[1]; LU, T ^[1]

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1. Rensselaer Polytechnic Institute (RPI)
2. ORNL

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: OE USDOE - Office of Electric Transmission and Distribution
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1089757
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1 Vol. 343; ISSN 0022-0248
• Country of Publication: United States
• Language: English