Method of manufacture of atomically thin boron nitride

Zettl, Alexander K

Method of manufacture of atomically thin boron nitride

Patent · 06 August 2013

OSTI ID:1089414

Zettl, Alexander K

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

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Research Organization:: LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-05CH11231

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 8,501,024

Application Number:: 12/895,624

OSTI ID:: 1089414

Country of Publication:: United States

Language:: English

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