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Title: Diamond nucleation using polyethene

Patent ·
OSTI ID:1088693

The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Research Organization:
University of Puerto Rico (San Juan, PR)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-08ER46526
Assignee:
University of Puerto Rico (San Juan, PR)
Patent Number(s):
8,491,964
Application Number:
13/070,214
OSTI ID:
1088693
Country of Publication:
United States
Language:
English

References (2)

Process of diamond growth from C.sub.70 patent March 1997
Nucleation and growth of diamond on silicon substrate coated with polymer journal June 1999

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