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Title: Optical memory

Abstract

Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

Inventors:
;
Publication Date:
Research Org.:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1086685
Patent Number(s):
8,477,551
Application Number:
13/288,152
Assignee:
U.S. Department of Energy (Washington, DC)
DOE Contract Number:  
AC03-765F00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 30 DIRECT ENERGY CONVERSION

Citation Formats

Mao, Samuel S, and Zhang, Yanfeng. Optical memory. United States: N. p., 2013. Web.
Mao, Samuel S, & Zhang, Yanfeng. Optical memory. United States.
Mao, Samuel S, and Zhang, Yanfeng. Tue . "Optical memory". United States. https://www.osti.gov/servlets/purl/1086685.
@article{osti_1086685,
title = {Optical memory},
author = {Mao, Samuel S and Zhang, Yanfeng},
abstractNote = {Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {7}
}

Patent:

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