Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
Journal Article
·
· Applied Physics Letters
OSTI ID:1085
GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1085
- Report Number(s):
- SAND98-2308J; ON: DE00001085
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
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