Extraction of recoverable and permanent positive charge trapping resulting from negative bias temperature instability in p-channel field effect transistors .
Conference
·
OSTI ID:1067652
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1067652
- Report Number(s):
- SAND2012-3050C
- Country of Publication:
- United States
- Language:
- English
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