Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Journal Article · Fri Aug 13 04:00:00 EDT 2010 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3480421· OSTI ID:1064974

Rangel, Elizabeth ^[1]; Matioli, Elison ^[1]; Chen, Hung-Tse ^[1]; Choi, Yong-Seok ^[1]; Weisbuch, Claude ^[2]; Speck, J. S. ^[1]; Hu, Evelyn L. ^[3]

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1. Univ. of California, Santa Barbara, CA (United States)
2. Ecole Polytechnique (France)
3. Harvard Univ., Cambridge, MA (United States)

Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm -thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirrorreflectivity.

• Research Organization: Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE SC Office of Basic Energy Sciences (SC-22)
• DOE Contract Number: SC0001009
• OSTI ID: 1064974
• Journal Information: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Vol. 97
• Country of Publication: United States
• Language: English

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