Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Zhu, Di; Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.

doi:10.1063/1.3371812

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Journal Article · Thu Mar 25 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3371812· OSTI ID:1064716

Zhu, Di ^[1]; Noemaun, Ahmed N. ^[1]; Schubert, Martin F. ^[1]; Cho, Jaehee ^[1]; Schubert, E. Fred ^[1]; Crawford, Mary H. ^[2]; Koleske, Daniel D. ^[2]

Rensselaer Polytechnic Inst., Troy, NY (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The confinement of electrons to the active region of GaInN light-emitting diodes(LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.

Research Organization:: Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1064716

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 96; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (18)

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Optical and structural studies in InGaN quantum well structure laser diodes Chichibu, Shigefusa F.; Azuhata, Takashi; Sugiyama, Mutsumi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 6 https://doi.org/10.1116/1.1418404	journal	January 2001
Green ThinGaN power-LED demonstrates 100 lm Peter, M.; Laubsch, A.; Stauss, P. physica status solidi (c), Vol. 5, Issue 6 https://doi.org/10.1002/pssc.200778554	journal	May 2008
Hot electron relaxation time in GaN Ye, Hong; Wicks, G. W.; Fauchet, P. M. Applied Physics Letters, Vol. 74, Issue 5 https://doi.org/10.1063/1.122995	journal	February 1999
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm Pope, I. A.; Smowton, P. M.; Blood, P. Applied Physics Letters, Vol. 82, Issue 17 https://doi.org/10.1063/1.1570515	journal	April 2003
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 8 https://doi.org/10.1063/1.3089687	journal	February 2009
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Xie, Jinqiao; Ni, Xianfeng; Fan, Qian Applied Physics Letters, Vol. 93, Issue 12 https://doi.org/10.1063/1.2988324	journal	September 2008
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu Applied Physics Letters, Vol. 93, Issue 4 https://doi.org/10.1063/1.2963029	journal	July 2008
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3058687	journal	January 2009
Energy relaxation by hot electrons in n-GaN epilayers Stanton, N. M.; Kent, A. J.; Akimov, A. V. Journal of Applied Physics, Vol. 89, Issue 2 https://doi.org/10.1063/1.1334642	journal	January 2001
Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping Rozhansky, I. V.; Zakheim, D. A. physica status solidi (a), Vol. 204, Issue 1 https://doi.org/10.1002/pssa.200673567	journal	January 2007
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822442	journal	December 2007
n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down Reed, M. L.; Readinger, E. D.; Shen, H. Applied Physics Letters, Vol. 93, Issue 13 https://doi.org/10.1063/1.2992582	journal	September 2008
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 Gardner, N. F.; Müller, G. O.; Shen, Y. C. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2807272	journal	December 2007
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs Efremov, A. A.; Bochkareva, N. I.; Gorbunov, R. I. Semiconductors, Vol. 40, Issue 5 https://doi.org/10.1134/S1063782606050162	journal	May 2006
Performance of High-Power AlInGaN Light Emitting Diodes Kim, A. Y.; G�tz, W.; Steigerwald, D. A. physica status solidi (a), Vol. 188, Issue 1 https://doi.org/10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5	journal	November 2001

Similar Records

A hole accelerator for InGaN/GaN light-emitting diodes

Journal Article · Mon Oct 13 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:22350926

GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Journal Article · Sun Nov 10 23:00:00 EST 2013 · Applied Physics Letters · OSTI ID:22254072

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:22494784

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Citation Formats

References (18)

Similar Records

Related Subjects