GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Journal Article · Mon Nov 11 04:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829576· OSTI ID:22254072

Lin, Guan-Bo; Ma, Ming; Fred Schubert, E. ^[1]; Cho, Jaehee ^[1]; Han, Sang-Heon; Kim, Min-Ho; Shim, HyunWook; Sun Kim, Young ^[2]

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1. Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
2. LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)

A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.

• OSTI ID: 22254072
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BONDING
CLADDING
DEPLETION LAYER
EFFICIENCY
ELECTRONS
EPITAXY
GALLIUM NITRIDES
LIGHT EMITTING DIODES
POLARIZATION
QUANTUM WELLS
SIMULATION