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Analysis of Lasing From Direct Transition in Ge-on-Si

Journal Article · Mon Jul 01 00:00:00 EDT 2013 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/JSTQE.2013.2249049· OSTI ID:1062807

Chow, W. W.; Kabuss, J.; Carmele, A.

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Research Organization:: Sandia National Laboratories

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1062807

Report Number(s):: SAND2013-0855J

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 4 Vol. 19; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics Society

Country of Publication:: United States

Language:: English

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