Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.
Journal Article
·
· Thin Solid Films
OSTI ID:1109406
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1109406
- Report Number(s):
- SAND2011-7369J; 472843
- Journal Information:
- Thin Solid Films, Journal Name: Thin Solid Films
- Country of Publication:
- United States
- Language:
- English
Similar Records
Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2
Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO{sub 2}
Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores.
Journal Article
·
Thu Sep 01 00:00:00 EDT 2011
· Thin Solid Films
·
OSTI ID:1257913
Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO{sub 2}
Journal Article
·
Mon Sep 13 00:00:00 EDT 2004
· Applied Physics Letters
·
OSTI ID:20632842
Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores.
Journal Article
·
Sun Apr 01 00:00:00 EDT 2012
· Proposed for publication in Journal of Applied Physics.
·
OSTI ID:1068463