Optimization of strain-relaxed InPyAs1-y buffers for InGaAs thermophotovoltaic devices.
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1055907
- Report Number(s):
- SAND2006-4522
- Country of Publication:
- United States
- Language:
- English
Similar Records
Multijunction InGaAs thermophotovoltaic devices
GaInAsSb/AlGaAsSb/GaSb Thermophotovoltaic Devices
Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices
Conference
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:323667
GaInAsSb/AlGaAsSb/GaSb Thermophotovoltaic Devices
Technical Report
·
Wed Jan 28 23:00:00 EST 2004
·
OSTI ID:824864
Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices
Technical Report
·
Thu Oct 01 00:00:00 EDT 1998
·
OSTI ID:307868