In situ optimization of co-implantation and substrate temperature conditions for Nv-center formation in single crystal diamonds
Journal Article
·
· New Journal of Physics, NJP
We present first results from in situ characterization of NV-formation in single crystal diamonds following implantation of low energy nitrogen ions (7.7 keV), co-implantation of hydrogen, helium and carbon ions and in situ annealing. Diamond samples were implanted at room temperature or at a temperature of 780{degree} C during the implantation steps. We find that dynamic annealing during co-implantation enhances NV-center formation by up to 25%.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Accelerator& Fusion Research Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 1052170
- Report Number(s):
- LBNL-5229E
- Journal Information:
- New Journal of Physics, NJP, Vol. 13, Issue 3; ISSN 1367--2630
- Country of Publication:
- United States
- Language:
- English
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