Out of band radiation effects on resist patterning
Conference
·
OSTI ID:1050638
Our previous work estimated the expected out-of-band (OOB) flare contribution at the wafer level assuming that there is a given amount of OOB at the collector focus. We found that the OOB effects are wavelength, resist, and pattern dependent. In this paper, results from rigorous patterning evaluation of multiple OOB-exposed resists using the SEMATECH Berkeley 0.3-NA MET are presented. A controlled amount of OOB is applied to the resist films before patterning is completed with the MET. LER and process performance above the resolution limit and at the resolution limits are evaluated and presented. The results typically show a negative impact on LER and process performance after the OOB exposures except in the case of single resist formulation, where resolution and performance improvement was observed.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1050638
- Report Number(s):
- LBNL-4816E
- Country of Publication:
- United States
- Language:
- English
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