The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond
Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 953694
- Report Number(s):
- LBNL-882E; TRN: US201004%%519
- Resource Relation:
- Conference: SPIE Advanced Lithography 2009, San Jose, CA, February 23-27, 2009; Related Information: Journal Publication Date: April 2009
- Country of Publication:
- United States
- Language:
- English
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