A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes
Journal Article
·
· IEEE Transactions on Industry Applications
OSTI ID:1050402
- ORNL
Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1050402
- Journal Information:
- IEEE Transactions on Industry Applications, Journal Name: IEEE Transactions on Industry Applications Journal Issue: 1 Vol. 45; ISSN 0093-9994; ISSN ITIACR
- Country of Publication:
- United States
- Language:
- English
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