A 55 kW Three-Phase Inverter With Si IGBT s and SiC Schottky Diodes

Conference · Sun Jan 01 00:00:00 EST 2006

OSTI ID:1037108

Ozpineci, Burak ^[1]; Chinthavali, Madhu Sudhan ^[1]; Tolbert, Leon M ^[1]; Kashyap, Avinash S ^[1]; Mantooth, Homer A ^[1]

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1. ORNL

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1037108
• Resource Relation: Conference: IEEE Applied Power Electronics Conference, Dallas, TX, USA, 20060319, 20060323
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
EFFICIENCY
INVERTERS
ORNL
RELIABILITY
SILICON CARBIDES
SIMULATORS
TRANSISTORS