Interfacial Layer Growth Condition Dependent Carrier Transport Mechanisms in HfO2/SiO2 Gate Stacks
The temperature and field dependent leakage current in HfO{sub 2}/SiO{sub 2} gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 C to 105 C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase for chemically grown IL devices. The trap level energy, ({phi}{sub t}) -0.2 eV, indicates that doubly charged oxygen vacancies (V{sup 2-}) are the active electron traps which contribute to the leakage current in these gate stacks.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1049602
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 100; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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