Manipulation of Electronic Transport in the Bi(111) Surface State

Journal Article · Fri Jun 29 00:00:00 EDT 2012 · Physical Review Letters

OSTI ID:1049305

Horn-von, Hoegen M; Sutter, P; Jnawali, G; Klein, C; Wagner, Th; Hattab, H; Zahl, P; Acharya, D P; Lorke, A

We demonstrate the controlled manipulation of the 2D-electronic transport in the surface state of Bi(111) through the deposition of small amounts of Bi to generate adatoms and 2D islands as additional scatterers. The corresponding increase in resistance is recorded in situ and in real time. Model calculations based on mean-field nucleation theory reveal a constant scattering efficiency of adatoms and of small 2D Bi islands, independent of their size. This finding is supported by a detailed scanning tunneling microscopy and spectroscopy study at 5 K which shows a highly anisotropic scattering pattern surrounding each surface protrusion.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1049305
• Report Number(s): BNL-98429-2012-JA; PRLTAO; KC020401H; TRN: US201217%%638
• Journal Information: Physical Review Letters, Vol. 108, Issue 26; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
EFFICIENCY
NUCLEATION
SCANNING TUNNELING MICROSCOPY
SCATTERING
SPECTROSCOPY
TRANSPORT
functional nanomaterials