High resolution electron microscopy of GaAs capped GaSb nanostructures

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Applied Physics Letters

OSTI ID:1049178

Molina Rubio, Sergio I ^[1]; Beltran, AM ^[2]; Ben, Teresa ^[2]; Galindo, P. L. ^[2]; Taboada, Alfonso G ^[3]; Chisholm, Matthew F ^[1]

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1. ORNL
2. Universidad de Cadiz, Spain
3. Instituto de Microelectronica de Madrid (CNM, CSIC)

We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1 x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1 x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1049178
• Journal Information: Applied Physics Letters, Vol. 94, Issue 4; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
RESOLUTION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY