How Grain Boundaries in Cu(In,Ga)Se2 Thin Films are Charged: Revisit
Potential measurements on Cu(In,Ga)Se{sub 2} thin films using scanning Kelvin probe force microscopy have been reported extensively to address grain-boundary (GB) recombination by examining GB charging. However, the results are highly inconsistent. We revisit this issue by measuring high- and low-quality wide-bandgap films and using a complementary method of scanning capacitance microscopy. Our results show consistent positively charged GBs in our high-quality films with minimal surface defects, except for the {Sigma}3[112] GBs, which are charge neutral. We discuss possible artifacts due to surface defects when examining the GB charging and the role of GBs in the device performance.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1047927
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint
AFM-Based Microelectrical Characterization of Grain Boundaries in Cu(In,Ga)Se2 Thin Films
Local Built-in Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films
Conference
·
Fri Jun 01 00:00:00 EDT 2012
·
OSTI ID:1044452
AFM-Based Microelectrical Characterization of Grain Boundaries in Cu(In,Ga)Se2 Thin Films
Conference
·
Mon Jan 31 23:00:00 EST 2005
·
OSTI ID:15016399
Local Built-in Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films
Conference
·
Fri Dec 31 23:00:00 EST 2004
·
OSTI ID:860499