Selective Purcell enhancement of defect emission in ZnO thin films
- ORNL
- Fisk University, Nashville, TN
A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- ORNL work for others
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1047642
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 9 Vol. 37; ISSN 0146-9592; ISSN OPLEDP
- Country of Publication:
- United States
- Language:
- English
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