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Advanced Power Electronics for LED Drivers: Advanced Technologies for integrated Power Electronics

Program Document ·
OSTI ID:1046593

ADEPT Project: MIT is teaming with Georgia Institute of Technology, Dartmouth College, and the University of Pennsylvania (UPenn) to create more efficient power circuits for energy-efficient light-emitting diodes (LEDs) through advances in 3 related areas. First, the team is using semiconductors made of high-performing gallium nitride grown on a low-cost silicon base (GaN-on-Si). These GaN-on-Si semiconductors conduct electricity more efficiently than traditional silicon semiconductors. Second, the team is developing new magnetic materials and structures to reduce the size and increase the efficiency of an important LED power component, the inductor. This advancement is important because magnetics are the largest and most expensive part of a circuit. Finally, the team is creating an entirely new circuit design to optimize the performance of the new semiconductors and magnetic devices it is using.

Research Organization:
Massachusetts Institute of Technology
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI ID:
1046593
Country of Publication:
United States
Language:
English

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