Single crystal growth of Ga[subscript 2](Se[subscript x]Te[subscript 1;#8722;x])[subscript 3] semiconductors and defect studies via positron annihilation spectroscopy
- UCB
Small single crystals of Ga{sub 2}(Se{sub x}Te{sub 1-x}){sub 3} semiconductors, for x = 0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga{sub 2}Te{sub 3}. Defect studies via positron annihilation spectroscopy show an average positron lifetime of {approx} 400 ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- DOE - BASIC ENERGY SCIENCES
- OSTI ID:
- 1045040
- Journal Information:
- J. Cryst. Growth, Vol. 352, Issue (1) ; 08, 2012; Conference: Monterey, CA; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- ENGLISH
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