Overview of HPM Effects in Electronics
- Los Alamos National Laboratory
The following presentation contains an overview of HPM effects in modern electronics. HPM effects can be categorized into two basic level of effects, which are damaging and non-damaging. Damaging effects include junction breakdowns, dielectric breakdowns, and latch-up. These types of effects render a system inoperable until repaired. With non-damaging effects, HPM signals couple to into system components generating circuit responses that can overwhelm normal operation. Non-damaging effects can temporarily render a system inoperable or cause a system to lock and require a restart. Since modern systems are so complex, fundamental mechanisms of upset in circuit primitives are studied. All topics covered and all figured contained within are found in open literature. All data plots presented were obtained from experimental measurements conducted at the University of Maryland College Park and are also found in the open literature.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- LDRD
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1043001
- Report Number(s):
- LA-UR-12-21858
- Country of Publication:
- United States
- Language:
- English
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