Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density
Journal Article
·
· Materials Science Forum
OSTI ID:1042099
Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.
- Research Organization:
- BROOKHAVEN NATIONAL LABORATORY (BNL)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1042099
- Report Number(s):
- BNL--97777-2012-JA
- Journal Information:
- Materials Science Forum, Journal Name: Materials Science Forum Vol. 645-648; ISSN MSFOEP; ISSN 0255-5476
- Country of Publication:
- United States
- Language:
- English
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