Size-dependent Strain in Epitaxial (001)Gadolinium-doped Ceria Nanoislands
Journal Article
·
· Applied Physics Letters
OSTI ID:1041787
We report size-dependent strain in epitaxial gadolinium doped ceria nanoislands, which was determined by synchrotron x-ray diffraction. Reciprocal space sections of symmetric, (004) and asymmetric, (224) reflections are approximated by a model assuming size-dependent strain of the islands using real-space size distribution obtained by atomic force microscopy. We show that the islands smaller than 40 nm are subjected to a high level of lateral tensile strain and normal compression. The lateral to normal strain ratio determined from the reciprocal map analysis suggests that lateral tension is the primary stress generator, possibly due to oxygen vacancy ordering on the island-substrate interface.
- Research Organization:
- BROOKHAVEN NATIONAL LABORATORY (BNL)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1041787
- Report Number(s):
- BNL--97465-2012-JA
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 97; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Size-dependent Strain in Epitaxial (001) Gadolinium-doped Ceria Nanoislands
In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)
Nanoscale abnormal grain growth in (001) epitaxial ceria
Journal Article
·
Sun Dec 05 23:00:00 EST 2010
· Applied Physics Letters
·
OSTI ID:1020872
In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)
Journal Article
·
Sun Mar 05 23:00:00 EST 2006
· Applied Physics Letters
·
OSTI ID:20778783
Nanoscale abnormal grain growth in (001) epitaxial ceria
Journal Article
·
Tue Sep 01 00:00:00 EDT 2009
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:21287063