In-situ characterization of rapid crystallization of amorphous CoFeB electrods in CoFeB/MgO/CoFeB junctions during thermal annealing.
We report the crystallization study of CoFeB/MgO/CoFeB magnetic tunnel junctions using in-situ, time-resolved synchrotron-based x-ray diffraction and transmission electron microscopy. It was found that the crystallization of amorphous CoFeB electrodes occurs on a time scale of seconds during the postgrowth high temperature annealing. The crystallization can be well fit by the Johnson-Mehl-Avrami model and the effective activation energy of the process was determined to be 150 kJ/mol. The solid-state epitaxy mode of CoFeB was found to involve separate crystallization at different locations followed by subsequent merging of small grains, instead of layer-by-layer growth of CoFeB film along the MgO template.
- Research Organization:
- BROOKHAVEN NATIONAL LABORATORY (BNL)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1041133
- Report Number(s):
- BNL--90919-2010-JA; BR0204011
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions with CoFeB Electrodes
Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions
Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
Journal Article
·
Thu Dec 31 23:00:00 EST 2009
· Physical Review B: Condensed Matter and Materials Physics
·
OSTI ID:1020024
Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions
Journal Article
·
Mon Aug 24 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22489165
Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
Journal Article
·
Mon Jun 28 00:00:00 EDT 2010
· Applied Physics Letters
·
OSTI ID:21366997