Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions with CoFeB Electrodes

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Physical Review B: Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.81.144406· OSTI ID:1020024

Wang, W; Ni, C; Miao, X; Weiland, C; Shah, L; Fan, X; Parson, P; Jordan-Sweet, J; Kou, X; Zhang, Y

The competition between the interface crystallization and diffusion processes, their influence on the onset of symmetry-filtering coherent tunneling of {Delta}{sub 1} band electrons in the MgO-based magnetic tunnel junctions is investigated. Systematic study of the transport and magnetoresistance during thermal annealing of these junctions shows a unique behavior of the tunneling conductance in the parallel state. The optimal annealing time for achieving giant tunneling magnetoresistance at different temperatures is determined. The evolution of magnetoresistance consists of three distinct regions, responsible by different contributions from CoFeB electrodes and the MgO barrier. The whole phenomenon can be understood through an empirical model based on the Landauer tunneling picture.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1020024
• Report Number(s): BNL--95870-2011-JA
• Journal Information: Physical Review B: Condensed Matter and Materials Physics, Journal Name: Physical Review B: Condensed Matter and Materials Physics Journal Issue: 14 Vol. 81; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTALLIZATION
DIFFUSION
ELECTRODES
ELECTRONS
MAGNETORESISTANCE
TRANSPORT
TUNNELING
national synchrotron light source