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Phonon manipulation with phononic crystals

Technical Report ·
DOI:https://doi.org/10.2172/1039017· OSTI ID:1039017
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States)

In this work, we demonstrated engineered modification of propagation of thermal phonons, i.e. at THz frequencies, using phononic crystals. This work combined theoretical work at Sandia National Laboratories, the University of New Mexico, the University of Colorado Boulder, and Carnegie Mellon University; the MESA fabrication facilities at Sandia; and the microfabrication facilities at UNM to produce world-leading control of phonon propagation in silicon at frequencies up to 3 THz. These efforts culminated in a dramatic reduction in the thermal conductivity of silicon using phononic crystals by a factor of almost 30 as compared with the bulk value, and about 6 as compared with an unpatterned slab of the same thickness.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1039017
Report Number(s):
SAND--2012-0127
Country of Publication:
United States
Language:
English