Single P-N junction tandem photovoltaic device

Walukiewicz, Wladyslaw; Yu, Kin Man

Title: Single P-N junction tandem photovoltaic device

Patent · Tue Oct 18 00:00:00 EDT 2011

OSTI ID:1028778

Walukiewicz, Wladyslaw ^[1]; Yu, Kin Man ^[2]

Kensington, CA
Lafayette, CA

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-05CH11231

Assignee:: RoseStreet Labs Energy, Inc. (Phoenix, AZ)

Patent Number(s):: 8,039,740

Application Number:: 11/777,963

OSTI ID:: 1028778

Country of Publication:: United States

Language:: English

References (24)

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