Single P-N junction tandem photovoltaic device
Patent
·
OSTI ID:1039888
- Kensington, CA
- Lafayette, CA
A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- Assignee:
- RoseStreet Labs Energy (Phoenix, AZ)
- Patent Number(s):
- 8,129,614
- Application Number:
- 13/275,079
- OSTI ID:
- 1039888
- Country of Publication:
- United States
- Language:
- English
Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
|
journal | April 1994 |
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
|
journal | August 2004 |
Similar Records
Single P-N junction tandem photovoltaic device
Tandem solar cell
The spectral p-n junction model for tandem solar-cell design
Patent
·
2011
·
OSTI ID:1028778
Tandem solar cell
Thesis/Dissertation
·
1985
·
OSTI ID:6819216
The spectral p-n junction model for tandem solar-cell design
Journal Article
·
1987
· IEEE Trans. Electron Devices; (United States)
·
OSTI ID:5629198