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Title: Single P-N junction tandem photovoltaic device

Abstract

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Inventors:
 [1];  [2]
  1. Kensington, CA
  2. Lafayette, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1039888
Patent Number(s):
8,129,614
Application Number:
13/275,079
Assignee:
RoseStreet Labs Energy (Phoenix, AZ)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Single P-N junction tandem photovoltaic device. United States: N. p., 2012. Web.
Walukiewicz, Wladyslaw, Ager, III, Joel W., & Yu, Kin Man. Single P-N junction tandem photovoltaic device. United States.
Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Tue . "Single P-N junction tandem photovoltaic device". United States. https://www.osti.gov/servlets/purl/1039888.
@article{osti_1039888,
title = {Single P-N junction tandem photovoltaic device},
author = {Walukiewicz, Wladyslaw and Ager, III, Joel W. and Yu, Kin Man},
abstractNote = {A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.},
doi = {},
url = {https://www.osti.gov/biblio/1039888}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {3}
}

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Works referenced in this record:

Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
journal, April 1994


Optical properties and electronic structure of InN and In-rich group III-nitride alloys
journal, August 2004