Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

Conference · Sat Oct 01 00:00:00 EDT 2011

DOI:https://doi.org/10.1149/1.3629954· OSTI ID:1028764

Lo, C. F. ^[1]; Liu, L. ^[1]; Kang, Tsung Sheng ^[1]; Davies, Ryan ^[1]; Gila, Brent P. ^[1]; Pearton, S. J. ^[1]; Kravchenko, Ivan  ^[2]; Laboutin, O. ^[3]; Cao, Yu ^[3]; Johnson, Wayne J. ^[3]; Ren, F. ^[1]

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1. Univ. of Florida, Gainesville, FL (United States)
2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
3. Kopin Corporation, Taunton, MA (United States)

The critical voltage for degradation of AlGaN/GaN high electronmobility transistors (HEMTs) employed with the Pt/Ti/Au gatemetallization instead of the commonly used Ni/Au wassignificantly increased during the off-state stress. The typicalcritical voltage for HEMTs with Ni/Au gate metallization wasaround -60V. By sharp contrast, no critical voltage was observedfor the HEMTs with Pt/Ti/Au gate metallization, even up to -100V,which was the instrumental limitation in this experiment. BothSchottky forward and reverse gate characteristics of the Ni/Audegraded once the gate voltage passed the critical voltage ofaround -60V. There was no degradation exhibited for the HEMTswith Pt-gated HEMTs.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1028764
• Resource Relation: Journal Volume: 41; Journal Issue: 6; Conference: 220th ECS Meeting - Boston, Massachusetts, United States of America - 10/9/2011 12:00:00 AM-10/14/2011 12:00:00 AM
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
ELECTRON MOBILITY
TRANSISTORS
ORNL