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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

Conference ·
DOI:https://doi.org/10.1149/1.3629954· OSTI ID:1028764
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3];  [3];  [1]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Kopin Corporation, Taunton, MA (United States)
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The critical voltage for degradation of AlGaN/GaN high electronmobility transistors (HEMTs) employed with the Pt/Ti/Au gatemetallization instead of the commonly used Ni/Au wassignificantly increased during the off-state stress. The typicalcritical voltage for HEMTs with Ni/Au gate metallization wasaround -60V. By sharp contrast, no critical voltage was observedfor the HEMTs with Pt/Ti/Au gate metallization, even up to -100V,which was the instrumental limitation in this experiment. BothSchottky forward and reverse gate characteristics of the Ni/Audegraded once the gate voltage passed the critical voltage ofaround -60V. There was no degradation exhibited for the HEMTswith Pt-gated HEMTs.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
OSTI ID:
1028764
Country of Publication:
United States
Language:
English

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Related Subjects

99 GENERAL AND MISCELLANEOUS
ELECTRON MOBILITY
ORNL
TRANSISTORS