Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization
- Univ. of Florida, Gainesville, FL (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Kopin Corporation, Taunton, MA (United States)
The critical voltage for degradation of AlGaN/GaN high electronmobility transistors (HEMTs) employed with the Pt/Ti/Au gatemetallization instead of the commonly used Ni/Au wassignificantly increased during the off-state stress. The typicalcritical voltage for HEMTs with Ni/Au gate metallization wasaround -60V. By sharp contrast, no critical voltage was observedfor the HEMTs with Pt/Ti/Au gate metallization, even up to -100V,which was the instrumental limitation in this experiment. BothSchottky forward and reverse gate characteristics of the Ni/Audegraded once the gate voltage passed the critical voltage ofaround -60V. There was no degradation exhibited for the HEMTswith Pt-gated HEMTs.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1028764
- Resource Relation:
- Journal Volume: 41; Journal Issue: 6; Conference: 220th ECS Meeting - Boston, Massachusetts, United States of America - 10/9/2011 12:00:00 AM-10/14/2011 12:00:00 AM
- Country of Publication:
- United States
- Language:
- English
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