Role of interfacial transition layers in VO2/Al2O3 heterostructures

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3642980· OSTI ID:1028747

Zhou, Honghui ^[1]; Chisholm, Matthew F ^[1]; Yang, Tsung-Han ^[1]; Pennycook, Stephen J ^[1]; Narayan, Jagdish ^[2]

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1. ORNL
2. North Carolina State University

Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1028747
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 7; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

12 MANAGEMENT OF RADIOACTIVE WASTES, AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES
BUFFERS
DEPOSITION
FREE ENERGY
LASERS
MINIMIZATION
ORIENTATION
SAPPHIRE
SUBSTRATES
SYMMETRY
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
vanadium dioxide
alumina
interface
STEM HAADF
Electron energy-loss spectroscopy