Aberration-corrected Scanning Transmission Electron Microscopy for Atomic-scale Characterization of Semiconductor Devices

Conference · Mon Oct 01 04:00:00 EDT 2007 · ECS Transactions

DOI:https://doi.org/10.1149/1.2779062· OSTI ID:1028146

Van Benthem, Klaus ^[1]; Pennycook, Stephen J. ^[1]

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1. ORNL

Aberration correction in the scanning transmission electron microscope brings sub-Ångström electron probe sizes and single atom sensitivity which enable the characterization of semiconductor devices and their defects with unprecedented detail. Further benefits include simultaneous bright field and dark field image acquisition and a new three-dimensional imaging technique. Here, we will review some major results obtained by aberration corrected scanning transmission electron microscopy and highlight some future research directions.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1028146
• Conference Information: Journal Name: ECS Transactions Journal Issue: 3 Journal Volume: 11
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ATOMS
DEFECTS
ELECTRON MICROSCOPES
ELECTRON PROBES
SEMICONDUCTOR DEVICES
SENSITIVITY
STEM
TRANSMISSION ELECTRON MICROSCOPY
aberration correction