Towards atomic scale engineering of rare-earth-doped SiAlON ceramics through aberration-corrected scanning transmission electron microscopy

Journal Article · Fri Dec 31 23:00:00 EST 2010 · Scripta Materialia

DOI:https://doi.org/10.1016/j.scriptamat.2011.06.038· OSTI ID:1025871

Yurdakul, Hilmi ^[1]; Idrobo Tapia, Juan C ^[2]; Pennycook, Stephen J ^[2]; Turan, S ^[1]

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1. Anadolu University, Eskisehir, Turkey
2. ORNL

Direct visualization of rare earths in {alpha}- and {beta}-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of {beta}-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in {alpha}-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in {beta}-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

• Research Organization: Oak Ridge National Laboratory (ORNL); Shared Research Equipment Collaborative Research Center
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1025871
• Journal Information: Scripta Materialia, Journal Name: Scripta Materialia Journal Issue: 8 Vol. 65; ISSN 1359-6462
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ATOMS
CERAMICS
ELECTRON MICROSCOPES
INTERSTITIALS
MICROSCOPY
OCCUPATIONS
RARE EARTHS
RECOMMENDATIONS
SILICON NITRIDES
SOLUBILITY
TRANSMISSION ELECTRON MICROSCOPY