Compositional Analysis With Atomic Column Spatial Resolution by 5th Order Aberration-corrected Scanning Transmission Electron Microscopy

Journal Article · Fri Dec 31 23:00:00 EST 2010 · Microscopy and Microanalysis

DOI:https://doi.org/10.1017/S1431927611000213· OSTI ID:1024680

Hernandez-Maldonado, David ^[1]; Herrera, Miriam ^[1]; Alonso-Gonzalez, Pablo ^[2]; Gonzalez, Yolanda ^[2]; Gonzalez, Luisa ^[2]; Gazquez Alabart, Jaume ^[3]; Varela del Arco, Maria ^[3]; Pennycook, Stephen J ^[3]; Guerrero, M. P. ^[1]; Pizarro, Joaquin ^[1]; Galindo, Pedro ^[1]; Molina, S. I. ^[1]

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1. Universidad de Cadiz, Spain
2. Instituto de Microelectronica de Madrid (CNM, CSIC)
3. ORNL

We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an In{sub x}Ga{sub 1-x}As multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992)]. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1024680
• Journal Information: Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: 4 Vol. 17; ISSN 1431-9276
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
DISTRIBUTION
ENERGY LEVELS
MOLECULAR BEAM EPITAXY
RESOLUTION
SEGREGATION
SPATIAL RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY