Methods for forming particles from single source precursors

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

Title: Methods for forming particles from single source precursors

Patent · Tue Aug 23 00:00:00 EDT 2011

OSTI ID:1024113

Fox, Robert V ^[1]; Rodriguez, Rene G ^[2]; Pak, Joshua ^[2]

Idaho Falls, ID
Pocatello, ID

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

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Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC07-05ID14517

Assignee:: Battelle Energy Alliance, LLC (Idaho Falls, ID)

Patent Number(s):: 8,003,070

Application Number:: 12/047,956

OSTI ID:: 1024113

Country of Publication:: United States

Language:: English

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