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Title: Methods for forming particles from single source precursors

Abstract

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Inventors:
 [1];  [2];  [2]
  1. Idaho Falls, ID
  2. Pocatello, ID
Publication Date:
Research Org.:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
Sponsoring Org.:
USDOE
OSTI Identifier:
1024113
Patent Number(s):
8,003,070
Application Number:
12/047,956
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID) IDO
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Methods for forming particles from single source precursors. United States: N. p., 2011. Web.
Fox, Robert V, Rodriguez, Rene G, & Pak, Joshua. Methods for forming particles from single source precursors. United States.
Fox, Robert V, Rodriguez, Rene G, and Pak, Joshua. Tue . "Methods for forming particles from single source precursors". United States. doi:. https://www.osti.gov/servlets/purl/1024113.
@article{osti_1024113,
title = {Methods for forming particles from single source precursors},
author = {Fox, Robert V and Rodriguez, Rene G and Pak, Joshua},
abstractNote = {Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2011},
month = {Tue Aug 23 00:00:00 EDT 2011}
}

Patent:

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