Methods of forming semiconductor devices and devices formed using such methods

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

Methods of forming semiconductor devices and devices formed using such methods

Patent · 21 May 2013

OSTI ID:1083982

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

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Research Organization:: INL (Idaho National Laboratory (United States))

Sponsoring Organization:: USDOE

DOE Contract Number:: AC07-05ID14517;

Assignee:: Battelle Energy Alliance, LLC (Idaho Falls, ID)

Patent Number(s):: 8,445,388

Application Number:: 13/099,043

OSTI ID:: 1083982

Country of Publication:: United States

Language:: English

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