Chemical and Electronic Surface Structure of 20%-Efficient Cu(in,Ga)Se2 Thin Film Solar Cell Absorbers
The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se{sub 2} thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the 'In-terminated' absorber.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1021238
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5, 2009 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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