Magnetostructural Influences of Thin Mg Insert Layers in Crystalline CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions

Journal Article · Mon Dec 20 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3527939· OSTI ID:1020879

Hindmarch, A T; Arena, D; Harnchana, V; Ciudad, D; Negusse, E; Brown, A P; Brydson, R M.D.; Marrows, C H

It is common to find a thin ({approx}0.5 nm) layer of Mg deposited prior to the MgO tunnel barrier in crystalline CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions, due to the improved device performance that results. However, despite their common usage, the reasons why such layers are effective are unclear. We use structures that model the lower electrode of such devices to show that a suitably thick Mg insert layer enhances the crystal quality of both MgO and CoFe(B), permits interfacial oxides to reduce back to a metallic ferromagnetic state, and hence improves magnetic switching of the CoFe(B) electrode, properties which are inextricably linked to device performance.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1020879
• Report Number(s): BNL--94718-2011-JA; KC0401030
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRODES
OXIDES
PERFORMANCE
national synchrotron light source