Transition Behavior of Surface Morphology Evolution of Si(100) During Low-Energy Normal-Incidence Ar+ Ion Bombardment
The temperature dependence of the surface morphology evolution during 1000 eV Ar{sup +} ion bombardment of Si(100) surfaces at normal incidence is studied in real time. At room temperature the surface is amorphized by the ion bombardment but remains smooth. Calculations suggest this may be due to ion impact induced lateral mass redistribution. However, at the fluxes used here, surface roughening occurs above 400 C, and in the range of 400 C to 500 C a transition region from amorphous to crystalline surface is observed. Above 500 C, the surface remains crystalline and the growing corrugations exhibit dynamic scaling with power law growth in amplitude and characteristic length scale. This behavior is characteristic of instabilities driven by surface diffusion processes.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1019770
- Report Number(s):
- BNL--95616-2011-JA
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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