Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Journal Article · Mon Oct 17 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2099521· OSTI ID:20706385

Ozaydin, Gozde; Oezcan, Ahmet S; Wang, Yiyi; Ludwig, Karl F; Hua, Zhou; Headrick, Randall L; Siddons, D Peter ^[1]

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1. Department of Aerospace and Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States)

The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar{sup +} ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000 eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures ('dots') that are typically 3 nm high with a spatial wavelength of approximately 30 nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.

• OSTI ID: 20706385
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
CRYSTAL GROWTH
EV RANGE 100-1000
ION BEAMS
MOLYBDENUM
QUANTUM DOTS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS
X RADIATION
X-RAY DIFFRACTION