Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100)

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3384997· OSTI ID:1019708

De Keyser, K; Van Bockstael, C; Van Meirhaeghe, R; Detavernier, C; Verleysen, E; Bender, H; Vandervorst, W; Jordan-Sweet, J; Lavoie, C

The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 C.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1019708
• Report Number(s): BNL--95554-2011-JA
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AGGLOMERATION
ELECTRIC CONDUCTIVITY
NICKEL
NICKEL SILICIDES
SILICON
STABILITY
SUBSTRATES
THICKNESS
national synchrotron light source