The structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon

Technical Report · Mon Nov 01 04:00:00 EST 1993

DOI:https://doi.org/10.2172/10194006· OSTI ID:10194006

Seager, C H; Myers, S M; Follstaedt, D M; Stein, H J; Wampler, W R

Si implanted with He to doses of about 2 {times} 10{sup 16}cm{sup {minus}2} and greater and annealed at high temperatures develops a layer of internal nanocavities near the end of the He range. Above an annealing temperature of 700 C, all the implanted He escapes from these implanted samples, and the resultant internal cavity surfaces can be shown to possess a high density of chemically reactive Si dangling orbitals. These structures, in addition to possessing a variety of interesting electronic properties, have recently been shown to hold great promise as getters for removing undesirable impurities from the silicon matrix. Here the authors describe some of the structural features of these nanocavities and studies which have been used to accurately determine the binding energy of H and Cu to Si atoms at the cavity walls. Recently, they have also demonstrated that these nanocavities capture large densities of majority carriers in n- and p-type silicon. These electrical measurements have demonstrated that the nanocavity electronic states possess both acceptor and donor levels in the Si forbidden gap. The approximate location of these levels has been determined by a variety of different types of capacitance transient spectroscopy.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10194006
• Report Number(s): SAND--93-1725C; CONF-9308191--1; ON: DE94002681; BR: GB0103012
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605
665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BINDING ENERGY
CHEMICAL PROPERTIES
COPPER
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GETTERING
HELIUM IONS
HYDROGEN
IMPURITIES
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
ION IMPLANTATION
RADIATION EFFECTS
SILICON
SPECTROSCOPY
VOIDS