Binding of copper to nanocavity surfaces in silicon
Conference
·
OSTI ID:10181842
We demonstrate that nanometer-scale voids within Si, formed by He ion implantation and annealing, trap Cu atoms with a binding energy of 2.2 {plus_minus} 0.2 eV relative to solution. This trapping saturates at a level consistent with monolayer coverage of the cavity walls, and it is ascribed to the reaction of Cu with Si dangling bonds on the internal surfaces. Our experiments also confirm the previously reported solution enthalpy of Cu in /Si relative to precipitated Cu{sub 3}Si, 1.7 eV, so that the binding at cavity traps is stronger. It is proposed that nanocavities may provide superior gettering of metallic impurities in Si.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10181842
- Report Number(s):
- SAND--93-0244C; CONF-9307124--1; ON: DE93019073
- Country of Publication:
- United States
- Language:
- English
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